Home

Products

Discrete Semiconductor Products

Transistors

IGBTs

Single IGBTs

IXSH24N60A

Banner
productimage

IXSH24N60A

IGBT 600V 48A 150W TO247

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

IXYS HiPerFAST™ IXSH24N60A is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power switching applications. This PT IGBT features a robust 600V collector-emitter breakdown voltage and a continuous collector current rating of 48A (96A pulsed). With a low on-state voltage of 2.7V at 24A and 15V gate voltage, and optimized switching characteristics with typical turn-off delay of 450ns and switching energy of 2mJ (off), the IXSH24N60A ensures efficient operation. Its 150W power dissipation and TO-247AD package with through-hole mounting facilitate thermal management. The gate charge is rated at 75nC. This component is suitable for use in power supplies, motor drives, and industrial automation.

Additional Information

Series: HiPerFAST™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 24A
Supplier Device PackageTO-247AD
IGBT TypePT
Td (on/off) @ 25°C100ns/450ns
Switching Energy2mJ (off)
Test Condition480V, 24A, 10Ohm, 15V
Gate Charge75 nC
Current - Collector (Ic) (Max)48 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)96 A
Power - Max150 W

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
IXGH50N90B2D1

IGBT PT 900V 75A TO247AD

product image
IXGH50N90B2

IGBT 900V 75A 400W TO247

product image
IXGH24N60A

IGBT 600V 48A 150W TO247AD