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IXSH24N60A

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IXSH24N60A

IGBT 600V 48A 150W TO247

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

IXYS HiPerFAST™ IXSH24N60A is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power switching applications. This PT IGBT features a robust 600V collector-emitter breakdown voltage and a continuous collector current rating of 48A (96A pulsed). With a low on-state voltage of 2.7V at 24A and 15V gate voltage, and optimized switching characteristics with typical turn-off delay of 450ns and switching energy of 2mJ (off), the IXSH24N60A ensures efficient operation. Its 150W power dissipation and TO-247AD package with through-hole mounting facilitate thermal management. The gate charge is rated at 75nC. This component is suitable for use in power supplies, motor drives, and industrial automation.

Additional Information

Series: HiPerFAST™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 24A
Supplier Device PackageTO-247AD
IGBT TypePT
Td (on/off) @ 25°C100ns/450ns
Switching Energy2mJ (off)
Test Condition480V, 24A, 10Ohm, 15V
Gate Charge75 nC
Current - Collector (Ic) (Max)48 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)96 A
Power - Max150 W

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