IXSH20N60B2D1
IGBT 600V 35A 190W TO247Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXSH20N60B2D1 is a 600V, 35A Punch-Through (PT) Insulated Gate Bipolar Transistor (IGBT) designed for demanding power conversion applications. This component features a maximum collector current of 35A, with a pulsed capability of 60A. The Vce(on) is specified at 2.5V under a gate-emitter voltage of 15V and a collector current of 16A, with a corresponding gate charge of 33 nC. The device offers a maximum power dissipation of 190W and a low switching energy of 380µJ (off) at 480V, 16A, 10 Ohm, 15V. The IXSH20N60B2D1 is housed in a TO-247AD package for through-hole mounting, operating across a temperature range of -55°C to 150°C. Typical applications include industrial motor drives and power supplies.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 30 ns |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 16A |
| Supplier Device Package | TO-247AD |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 30ns/116ns |
| Switching Energy | 380µJ (off) |
| Test Condition | 480V, 16A, 10Ohm, 15V |
| Gate Charge | 33 nC |
| Current - Collector (Ic) (Max) | 35 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 60 A |
| Power - Max | 190 W |
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