IXSH15N120BD1
IGBT 1200V 30A 150W TO247Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXSH15N120BD1 is a high-performance N-channel Power Transistor (PT) IGBT designed for demanding applications. This component offers a 1200 V collector-emitter breakdown voltage and a continuous collector current capability of 30 A, with a pulsed current rating (Icm) of 60 A. Dissipating up to 150 W, it features a low on-state voltage (Vce(on)) of 3.4V at 15V gate-emitter voltage and 15A collector current. Typical switching performance includes a gate charge of 57 nC and a reverse recovery time (trr) of 30 ns, with switching energy of 1.5 mJ (off) under test conditions of 960V, 15A, 10 Ohm, and 15V. The IXYS IXSH15N120BD1 is housed in a TO-247AD package for through-hole mounting and operates across a temperature range of -55°C to 150°C. This device is suitable for use in power factor correction, induction heating, and motor drive applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 30 ns |
| Vce(on) (Max) @ Vge, Ic | 3.4V @ 15V, 15A |
| Supplier Device Package | TO-247AD |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 30ns/148ns |
| Switching Energy | 1.5mJ (off) |
| Test Condition | 960V, 15A, 10Ohm, 15V |
| Gate Charge | 57 nC |
| Current - Collector (Ic) (Max) | 30 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 60 A |
| Power - Max | 150 W |
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