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IXSH15N120B

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IXSH15N120B

IGBT 1200V 30A 150W TO247

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

The IXYS IXSH15N120B is a Power Transistor, specifically a PT IGBT designed for high-voltage applications. This component features a 1200V collector-emitter breakdown voltage and a continuous collector current capability of 30A, with a pulsed current rating of 60A. The device offers a maximum power dissipation of 150W and a low on-state voltage of 3.4V at 15V gate-emitter voltage and 15A collector current. Key switching characteristics include a gate charge of 57 nC and turn-on/turn-off delays of 30ns/148ns at 25°C, with switching energy specified at 1.5mJ (off) under test conditions of 960V, 15A, 10 Ohm, and 15V. The IXSH15N120B is housed in a TO-247-3 package for through-hole mounting, operating within a temperature range of -55°C to 150°C. This device is commonly utilized in industrial power conversion, motor control, and power supply applications.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic3.4V @ 15V, 15A
Supplier Device PackageTO-247AD
IGBT TypePT
Td (on/off) @ 25°C30ns/148ns
Switching Energy1.5mJ (off)
Test Condition960V, 15A, 10Ohm, 15V
Gate Charge57 nC
Current - Collector (Ic) (Max)30 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector Pulsed (Icm)60 A
Power - Max150 W

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