IXSA20N60B2D1
IGBT 600V 35A 190W TO263Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXSA20N60B2D1 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power switching applications. This PT type IGBT offers a 600V breakdown voltage and a continuous collector current capability of 35A (60A pulsed), dissipating up to 190W. It features a low on-state voltage (Vce(on)) of 2.5V at 15V gate-emitter voltage and 16A collector current, with a gate charge of 33 nC. The device exhibits a reverse recovery time of 30 ns and switching energy of 380µJ (off), contributing to efficient operation. The IXSA20N60B2D1 is housed in a surface-mount TO-263-3, D2PAK (2 Leads + Tab), TO-263AB package, making it suitable for automated assembly. This component is commonly utilized in power supplies, motor drives, and industrial automation systems. It operates across a wide temperature range of -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BoxDownload Free CAD Model:
Technical Details:
| Packaging | Box |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 30 ns |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 16A |
| Supplier Device Package | TO-263AA |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 30ns/116ns |
| Switching Energy | 380µJ (off) |
| Test Condition | 480V, 16A, 10Ohm, 15V |
| Gate Charge | 33 nC |
| Current - Collector (Ic) (Max) | 35 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 60 A |
| Power - Max | 190 W |
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