IXSA15N120B
IGBT 1200V 30A 150W TO263AAManufacturer: IXYS
Categories: Single IGBTs
Quality Control: Learn More
IXYS IXSA15N120B is a high-performance Planar Trench Insulated Gate Bipolar Transistor (IGBT) designed for demanding power switching applications. This component features a 1200V collector-emitter breakdown voltage and a continuous collector current capability of 30A (60A pulsed). With a maximum power dissipation of 150W and a low on-state voltage of 3.4V at 15V gate-emitter voltage and 15A collector current, it ensures efficient operation. The IXSA15N120B is housed in a surface-mount TO-263AA package, facilitating compact board designs. Key electrical characteristics include a gate charge of 57 nC and switching energies of 1.75mJ (off). Typical applications include industrial motor drives, power supplies, and renewable energy systems. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BoxDownload Free CAD Model:
Technical Details:
| Packaging | Box |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 3.4V @ 15V, 15A |
| Supplier Device Package | TO-263AA |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 30ns/148ns |
| Switching Energy | 1.75mJ (off) |
| Test Condition | 960V, 15A, 10Ohm, 15V |
| Gate Charge | 57 nC |
| Current - Collector (Ic) (Max) | 30 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 60 A |
| Power - Max | 150 W |
Request a Quote
Clients Also Buy
IXA20I1200PZ-TUB
DISC IGBT XPT-GENX3 TO-263D2
IXGB75N60BD1
IGBT 600V 120A 360W PLUS264
IXGA48N60A3-TRL
IXGA48N60A3 TRL
