IXSA10N60B2D1
IGBT 600V 20A 100W TO263Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXSA10N60B2D1 is a 600V, 20A Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency power switching applications. This PT IGBT features a maximum continuous collector current (Ic) of 20A, with a pulsed capability of 30A (Icm). It offers a low on-state voltage (Vce(on)) of 2.5V at 15V gate drive and 10A collector current, ensuring minimal conduction losses. The device exhibits a typical gate charge of 17 nC and a switching energy of 430µJ (off) under test conditions of 480V, 10A, 30 Ohm, and 15V gate drive. With a maximum power dissipation of 100W and an operating temperature range of -55°C to 150°C (TJ), this IGBT is suitable for demanding industrial environments. The IXSA10N60B2D1 is presented in a TO-263AA surface-mount package, facilitating integration into compact designs. Its robust performance characteristics make it a key component in power factor correction, switch-mode power supplies, and motor control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 25 ns |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 10A |
| Supplier Device Package | TO-263AA |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 30ns/180ns |
| Switching Energy | 430µJ (off) |
| Test Condition | 480V, 10A, 30Ohm, 15V |
| Gate Charge | 17 nC |
| Current - Collector (Ic) (Max) | 20 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 30 A |
| Power - Max | 100 W |
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