IXRP15N120
IGBT 1200V 25A 300W TO220Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXRP15N120 is a Non-Punch Through (NPT) Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage applications. This component features a collector-emitter breakdown voltage of 1200 V and a continuous collector current capability of 25 A. Its on-state voltage drop (Vce(on)) is a maximum of 2.95 V at 15 V gate voltage and 10 A collector current. The device offers a maximum power dissipation of 300 W and is packaged in a TO-220-3 through-hole configuration. Gate charge is specified at 36 nC, with switching energy figures of 1.1 mJ (on) and 130 µJ (off) under test conditions of 600 V, 10 A, 47 Ohm, and 15 V. The operating temperature range is from -55°C to 150°C. This IXYS IGBT is suitable for use in industrial power conversion and motor drive applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 300 ns |
| Vce(on) (Max) @ Vge, Ic | 2.95V @ 15V, 10A |
| Supplier Device Package | TO-220-3 |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | - |
| Switching Energy | 1.1mJ (on), 130µJ (off) |
| Test Condition | 600V, 10A, 47Ohm, 15V |
| Gate Charge | 36 nC |
| Current - Collector (Ic) (Max) | 25 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 300 W |
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