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IXGX72N60C3H1

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IXGX72N60C3H1

IGBT 600V 75A 540W PLUS247

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

The IXYS GenX3™ Series IXGX72N60C3H1 is a 600V, 75A insulated gate bipolar transistor (IGBT) designed for high-power switching applications. This PT IGBT features a maximum collector current (Ic) of 75A and a pulsed collector current (Icm) of 360A, with a power dissipation of 540W. The device offers a low on-state voltage (Vce(on)) of 2.5V at 15V gate-emitter voltage and 50A collector current, and a gate charge of 174 nC. Switching characteristics include turn-on delay (Td(on)) of 27ns and turn-off delay (Td(off)) of 77ns at 25°C, with switching energies of 1.03mJ (on) and 480µJ (off) under test conditions of 480V, 50A, 2 Ohm, 15V. The IXGX72N60C3H1 is packaged in a through-hole PLUS247™-3 variant (TO-247-3 Variant), suitable for demanding thermal management. Operating temperature ranges from -55°C to 150°C (TJ). This component is commonly utilized in industrial motor drives, power supplies, and renewable energy systems.

Additional Information

Series: GenX3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3 Variant
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)140 ns
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 50A
Supplier Device PackagePLUS247™-3
IGBT TypePT
Td (on/off) @ 25°C27ns/77ns
Switching Energy1.03mJ (on), 480µJ (off)
Test Condition480V, 50A, 2Ohm, 15V
Gate Charge174 nC
Current - Collector (Ic) (Max)75 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)360 A
Power - Max540 W

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