IXGX60N60C2D1
IGBT 600V 75A 480W PLUS247Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS HiPerFAST™ IGBT, part number IXGX60N60C2D1, is a high-performance insulated gate bipolar transistor designed for demanding power switching applications. Featuring a 600V collector-emitter breakdown voltage and a continuous collector current rating of 75A (300A pulsed), this device offers robust performance. The Vce(on) is specified at a maximum of 2.5V at 15V gate-emitter voltage and 50A collector current. Key switching characteristics include a gate charge of 146 nC, a reverse recovery time of 35 ns, and switching energies of 400µJ (on) and 480µJ (off) under test conditions of 400V, 50A, 2 Ohm, and 15V. The IGBT type is PT with a standard input. Operating temperature ranges from -55°C to 150°C (TJ). This component is housed in a PLUS247™-3 package suitable for through-hole mounting. The IXGX60N60C2D1 is utilized in industrial sectors such as motor control, power supplies, and welding equipment.
Additional Information
Series: HiPerFAST™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 35 ns |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 50A |
| Supplier Device Package | PLUS247™-3 |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 18ns/95ns |
| Switching Energy | 400µJ (on), 480µJ (off) |
| Test Condition | 400V, 50A, 2Ohm, 15V |
| Gate Charge | 146 nC |
| Current - Collector (Ic) (Max) | 75 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 300 A |
| Power - Max | 480 W |
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