IXGX60N60B2D1
IGBT 600V 75A 500W PLUS247Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXGX60N60B2D1 is a 600V, 75A Insulated Gate Bipolar Transistor (IGBT) from the HiPerFAST™ series. This PT IGBT features a 1.8V saturation voltage at 15V gate-emitter voltage and 50A collector current, with a maximum continuous collector current of 75A and a pulsed collector current of 300A. The device offers a typical gate charge of 170 nC and a specified reverse recovery time of 35 ns. With a maximum power dissipation of 500W, it is designed for efficient switching with a switching energy of 1mJ (off) under test conditions of 400V, 50A, 3.3 Ohm, and 15V. The IXGX60N60B2D1 is housed in a PLUS247™-3 package suitable for through-hole mounting and operates within an extended temperature range of -55°C to 150°C. This component is commonly utilized in high-power applications across industrial automation, power supplies, and motor control systems.
Additional Information
Series: HiPerFAST™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 35 ns |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 50A |
| Supplier Device Package | PLUS247™-3 |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 28ns/160ns |
| Switching Energy | 1mJ (off) |
| Test Condition | 400V, 50A, 3.3Ohm, 15V |
| Gate Charge | 170 nC |
| Current - Collector (Ic) (Max) | 75 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 300 A |
| Power - Max | 500 W |
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