IXGX55N120A3H1
IGBT 1200V 125A 460W PLUS247Manufacturer: IXYS
Categories: Single IGBTs
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IXYS GenX3™ IGBT IXGX55N120A3H1 is a robust Insulated Gate Bipolar Transistor designed for high-power applications. This component features a 1200V collector-emitter breakdown voltage and a continuous collector current rating of 125A, with a pulsed capability of 400A. The Vce(on) is specified at a maximum of 2.3V at 15V gate-emitter voltage and 55A collector current, under a test condition of 960V, 55A, 3 Ohm, 15V.
With a maximum power dissipation of 460W and a 5.1mJ (on) / 13.3mJ (off) switching energy, the IXGX55N120A3H1 offers efficient performance. The gate charge is 185 nC, and the reverse recovery time (trr) is 200ns. The IGBT type is PT with standard input. Packaged in a PLUS247™-3 (TO-247-3 Variant) for through-hole mounting, this device is suitable for demanding industrial sectors such as motor drives, power supplies, and renewable energy systems.
Additional Information
Series: GenX3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 57 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | - |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 200 ns |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 55A |
| Supplier Device Package | PLUS247™-3 |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 23ns/365ns |
| Switching Energy | 5.1mJ (on), 13.3mJ (off) |
| Test Condition | 960V, 55A, 3Ohm, 15V |
| Gate Charge | 185 nC |
| Current - Collector (Ic) (Max) | 125 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 400 A |
| Power - Max | 460 W |
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