IXGX50N60C2D1
IGBT 600V 75A 480W TO247Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS HiPerFAST™ IXGX50N60C2D1 is a 600V N-channel Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency switching applications. This device features a collector current capability of 75A (continuous) and a pulsed capability of 300A, with a maximum power dissipation of 480W. The low collector-emitter saturation voltage (Vce(on)) of 2.5V at 15V Vge and 40A Ic, combined with a typical turn-off delay (Td(off)) of 115ns at 25°C, contributes to reduced switching losses. With a gate charge of 138 nC and a reverse recovery time (trr) of 35 ns, the IXGX50N60C2D1 is optimized for demanding power conversion circuits. Packaging is provided in a PLUS247™-3 through-hole configuration. This component is suitable for use in industrial motor drives, power supplies, and welding equipment.
Additional Information
Series: HiPerFAST™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 35 ns |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 40A |
| Supplier Device Package | PLUS247™-3 |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 18ns/115ns |
| Switching Energy | 380µJ (off) |
| Test Condition | 480V, 40A, 2Ohm, 15V |
| Gate Charge | 138 nC |
| Current - Collector (Ic) (Max) | 75 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 300 A |
| Power - Max | 480 W |
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