IXGX50N60BD1
IGBT 600V 75A 300W TO247Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXGX50N60BD1 is a 600V, 75A HiPerFAST™ Insulated Gate Bipolar Transistor (IGBT) in a PLUS247™-3 package. This device offers a maximum collector power dissipation of 300W and a continuous collector current of 75A, with a pulsed current capability of 200A. Key electrical parameters include a Vce(on) of 2.3V at 15V gate-emitter voltage and 50A collector current. Gate charge is rated at 110 nC, and the reverse recovery time (trr) is 50 ns. Typical switching times are noted as 50ns (td(on)) and 200ns (td(off)) at 25°C, with a switching energy of 1.5mJ (off) under test conditions of 480V, 50A, 2.7 Ohm, 15V. The operating temperature range is -55°C to 150°C. This component is suitable for applications in industrial motor drives and power supplies.
Additional Information
Series: HiPerFAST™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 50 ns |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 50A |
| Supplier Device Package | PLUS247™-3 |
| IGBT Type | - |
| Td (on/off) @ 25°C | 50ns/200ns |
| Switching Energy | 1.5mJ (off) |
| Test Condition | 480V, 50A, 2.7Ohm, 15V |
| Gate Charge | 110 nC |
| Current - Collector (Ic) (Max) | 75 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 200 A |
| Power - Max | 300 W |
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