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IXGX50N60B2D1

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IXGX50N60B2D1

IGBT 600V 75A 400W TO247

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

IXYS HiPerFAST™ IGBT IXGX50N60B2D1. This Power Transistor (PT) features a 600V collector-emitter breakdown voltage and a continuous collector current of 75A (200A pulsed). With a low on-state voltage of 2V at 40A, this device offers efficient power dissipation with a maximum power rating of 400W. The gate charge is 140 nC, and it exhibits a typical turn-off switching energy of 550µJ. Designed for through-hole mounting in a PLUS247™-3 package, it operates across a wide temperature range of -55°C to 150°C (TJ). Key applications include industrial motor drives, uninterruptible power supplies (UPS), and renewable energy systems.

Additional Information

Series: HiPerFAST™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3 Variant
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)35 ns
Vce(on) (Max) @ Vge, Ic2V @ 15V, 40A
Supplier Device PackagePLUS247™-3
IGBT TypePT
Td (on/off) @ 25°C18ns/190ns
Switching Energy550µJ (off)
Test Condition480V, 40A, 5Ohm, 15V
Gate Charge140 nC
Current - Collector (Ic) (Max)75 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)200 A
Power - Max400 W

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