IXGX50N60AU1
IGBT 600V 75A 300W TO247Manufacturer: IXYS
Categories: Single IGBTs
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IXYS HiPerFAST™ IXGX50N60AU1 is a 600V, 75A insulated gate bipolar transistor (IGBT) designed for high-efficiency power switching applications. This TO-247AD packaged device offers a maximum collector current of 75A, with a pulsed capability of 200A. The gate charge is specified at 200 nC, contributing to its fast switching characteristics. The IGBT exhibits a Vce(on) of 2.7V at 15V gate-emitter voltage and 50A collector current. With a maximum power dissipation of 300W and a wide operating temperature range of -55°C to 150°C, the IXGX50N60AU1 is suitable for demanding industrial and power conversion systems, including motor drives, uninterruptible power supplies (UPS), and welding equipment. The device features a reverse recovery time of 50 ns and switching energy of 4.8mJ (off) under test conditions of 480V, 50A, and 2.7 Ohms.
Additional Information
Series: HiPerFAST™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 50 ns |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 50A |
| Supplier Device Package | TO-247AD |
| IGBT Type | - |
| Td (on/off) @ 25°C | 50ns/200ns |
| Switching Energy | 4.8mJ (off) |
| Test Condition | 480V, 50A, 2.7Ohm, 15V |
| Gate Charge | 200 nC |
| Current - Collector (Ic) (Max) | 75 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 200 A |
| Power - Max | 300 W |
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