IXGX35N120CD1
IGBT 1200V 70A 350W PLUS247Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS HiPerFAST™ IGBT, part number IXGX35N120CD1, is a high-performance insulated gate bipolar transistor designed for demanding power switching applications. This component features a 1200 V collector-emitter breakdown voltage and a continuous collector current rating of 70 A, with a pulsed capability of 140 A. The device exhibits a low on-state voltage of 4V at 15V gate-emitter voltage and 35A collector current. With a maximum power dissipation of 350 W and a low switching energy of 3mJ (off), it is suitable for high-efficiency power conversion topologies. The standard input type and through-hole mounting in a PLUS247™-3 package facilitate integration into robust power modules. This IGBT is commonly utilized in industrial motor drives, renewable energy systems, and uninterruptible power supplies, operating across a temperature range of -55°C to 150°C.
Additional Information
Series: HiPerFAST™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 60 ns |
| Vce(on) (Max) @ Vge, Ic | 4V @ 15V, 35A |
| Supplier Device Package | PLUS247™-3 |
| IGBT Type | - |
| Td (on/off) @ 25°C | 50ns/150ns |
| Switching Energy | 3mJ (off) |
| Test Condition | 960V, 35A, 5Ohm, 15V |
| Gate Charge | 170 nC |
| Current - Collector (Ic) (Max) | 70 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 140 A |
| Power - Max | 350 W |
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