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IXGX28N140B3H1

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IXGX28N140B3H1

IGBT 1400V 60A 300W PLUS247

Manufacturer: IXYS

Categories: Single IGBTs

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The IXYS IXGX28N140B3H1 is a high-performance Insulated Gate Bipolar Transistor (IGBT) from the GenX3™ series. This component features a 1400V collector-emitter breakdown voltage and a continuous collector current rating of 60A, with a pulsed capability of 150A. Designed for demanding applications, it offers a maximum power dissipation of 300W. Key electrical characteristics include a low on-state voltage (Vce(on)) of 3.6V at 15V gate-emitter voltage and 28A collector current, and a typical gate charge of 88 nC. Switching performance is highlighted by a turn-on delay of 16ns and turn-off delay of 190ns at 25°C, with switching energies of 3.6mJ (on) and 3.9mJ (off) under test conditions of 960V, 28A, 5 Ohm, and 15V. The IXYS IXGX28N140B3H1 is housed in a through-hole PLUS247™-3 package, suitable for power conversion systems in industries such as industrial automation and renewable energy.

Additional Information

Series: GenX3™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3 Variant
Mounting TypeThrough Hole
Operating Temperature-
Input TypeStandard
Reverse Recovery Time (trr)350 ns
Vce(on) (Max) @ Vge, Ic3.6V @ 15V, 28A
Supplier Device PackagePLUS247™-3
IGBT Type-
Td (on/off) @ 25°C16ns/190ns
Switching Energy3.6mJ (on), 3.9mJ (off)
Test Condition960V, 28A, 5Ohm, 15V
Gate Charge88 nC
Current - Collector (Ic) (Max)60 A
Voltage - Collector Emitter Breakdown (Max)1400 V
Current - Collector Pulsed (Icm)150 A
Power - Max300 W

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