IXGX120N60B
IGBT 600V 200A 660W TO247Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXGX120N60B is a HiPerFAST™ series Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency power switching. This PT IGBT features a 600V collector-emitter breakdown voltage and a continuous collector current rating of 200A at a maximum power dissipation of 660W. The device exhibits a low on-state voltage of 2.1V at 15V gate-emitter voltage and 120A collector current, with switching energies of 2.4mJ (on) and 5.5mJ (off) under specified test conditions. It is housed in a PLUS247™-3 package for through-hole mounting, offering robust thermal performance across an operating temperature range of -55°C to 150°C. Applications include industrial motor drives, uninterruptible power supplies (UPS), and welding equipment.
Additional Information
Series: HiPerFAST™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 120A |
| Supplier Device Package | PLUS247™-3 |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 60ns/200ns |
| Switching Energy | 2.4mJ (on), 5.5mJ (off) |
| Test Condition | 480V, 100A, 2.4Ohm, 15V |
| Gate Charge | 350 nC |
| Current - Collector (Ic) (Max) | 200 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 300 A |
| Power - Max | 660 W |
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