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IXGX120N60A3

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IXGX120N60A3

IGBT 600V 200A 780W PLUS247

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

IXYS GenX3™ IXGX120N60A3. This high-performance Insulated Gate Bipolar Transistor (IGBT) features a 600V collector-emitter breakdown voltage and a continuous collector current rating of 200A (600A pulsed). Designed for demanding applications, it offers a maximum power dissipation of 780W and a low on-state voltage of 1.35V at 15V gate-emitter voltage and 100A collector current. The device exhibits typical switching characteristics with turn-on delay (Td(on)) of 39ns and turn-off delay (Td(off)) of 295ns at 25°C, along with switching energies of 2.7mJ (on) and 6.6mJ (off). It is housed in a PLUS247™-3 package for through-hole mounting and operates within a temperature range of -55°C to 150°C. This IGBT is suitable for use in industrial motor drives, uninterruptible power supplies (UPS), and power factor correction circuits.

Additional Information

Series: GenX3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 40 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3 Variant
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic1.35V @ 15V, 100A
Supplier Device PackagePLUS247™-3
IGBT TypePT
Td (on/off) @ 25°C39ns/295ns
Switching Energy2.7mJ (on), 6.6mJ (off)
Test Condition480V, 100A, 1.5Ohm, 15V
Gate Charge450 nC
Current - Collector (Ic) (Max)200 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)600 A
Power - Max780 W

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