IXGV25N250S
IGBT 2500V 60A 250W PLUS220SMDManufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXGV25N250S is a high-voltage NPT Insulated Gate Bipolar Transistor (IGBT) designed for demanding power switching applications. This component features a 2500V collector-emitter breakdown voltage and a continuous collector current rating of 60A, with a pulsed capability of 200A. The Vce(on) is specified at a maximum of 5.2V at 15V gate voltage and 75A collector current. With a maximum power dissipation of 250W, this IGBT is suitable for use in industrial motor drives, induction heating, and high-voltage power supplies. The device is housed in a PLUS-220SMD package for surface mounting and operates across a wide temperature range of -55°C to 150°C. The gate charge is 75 nC, facilitating efficient switching. The IXYS IXGV25N250S is supplied in tube packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | PLUS-220SMD |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 5.2V @ 15V, 75A |
| Supplier Device Package | PLUS-220SMD |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | - |
| Switching Energy | - |
| Test Condition | - |
| Gate Charge | 75 nC |
| Current - Collector (Ic) (Max) | 60 A |
| Voltage - Collector Emitter Breakdown (Max) | 2500 V |
| Current - Collector Pulsed (Icm) | 200 A |
| Power - Max | 250 W |
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