Home

Products

Discrete Semiconductor Products

Transistors

IGBTs

Single IGBTs

IXGT72N60A3-TRL

Banner
productimage

IXGT72N60A3-TRL

IGBT PT 600V 75A TO268

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

The IXYS IXGT72N60A3-TRL is a GenX3™ series Insulated Gate Bipolar Transistor (IGBT) with a collector-emitter voltage rating of 600V. This PT IGBT features a continuous collector current of 75A (400A pulsed) and a maximum power dissipation of 540W. The device exhibits a low on-state voltage of 1.35V at 15V gate-emitter voltage and 60A collector current. Switching characteristics include a gate charge of 230 nC, switching energy values of 1.38mJ (on) and 3.5mJ (off) under test conditions of 480V, 50A, 3 Ohm, 15V, and a reverse recovery time of 34 ns. The IXGT72N60A3-TRL is supplied in a TO-268 package for surface mounting and operates from -55°C to 150°C. This component is utilized in applications such as industrial motor drives and power supplies.

Additional Information

Series: GenX3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 40 week(s)Product Status: ActivePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)34 ns
Vce(on) (Max) @ Vge, Ic1.35V @ 15V, 60A
Supplier Device PackageTO-268
IGBT TypePT
Td (on/off) @ 25°C31ns/320ns
Switching Energy1.38mJ (on), 3.5mJ (off)
Test Condition480V, 50A, 3Ohm, 15V
Gate Charge230 nC
Current - Collector (Ic) (Max)75 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)400 A
Power - Max540 W

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy