IXGT72N60A3
IGBT PT 600V 75A TO268AAManufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXGT72N60A3 is a 600V, 75A Insulated Gate Bipolar Transistor (IGBT) from the GenX3™, XPT™ series. This PT-type IGBT features a maximum continuous collector current of 75A and a pulsed collector current of 400A. With a low on-state voltage (Vce(on)) of 1.35V at 15V gate-emitter voltage and 60A collector current, it offers efficient power handling up to 540W. Key switching characteristics include a gate charge of 230 nC and switching energies of 1.38mJ turn-on and 3.5mJ turn-off at 480V, 50A, 3 Ohm, 15V. The device is packaged in a TO-268AA (TO-268-3, D3PAK) surface mount configuration, suitable for operation across an extended temperature range of -55°C to 150°C. This component is utilized in applications such as high-frequency power switching and motor control.
Additional Information
Series: GenX3™, XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 40 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.35V @ 15V, 60A |
| Supplier Device Package | TO-268AA |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 31ns/320ns |
| Switching Energy | 1.38mJ (on), 3.5mJ (off) |
| Test Condition | 480V, 50A, 3Ohm, 15V |
| Gate Charge | 230 nC |
| Current - Collector (Ic) (Max) | 75 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 400 A |
| Power - Max | 540 W |
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