IXGT6N170AHV-TRL
IGBT 1700V 7A TO268HVManufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXGT6N170AHV-TRL is a high-voltage Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. This component features a 1700 V collector-emitter breakdown voltage and a continuous collector current of 6 A, with a pulsed current capability of 14 A. The device exhibits a typical on-state voltage of 7 V at 3 A and 15 V gate-emitter voltage. With a gate charge of 18.5 nC and switching energies of 590 µJ (turn-on) and 180 µJ (turn-off) under specified test conditions (850 V, 6 A, 33 O, 15 V), it offers efficient switching performance. The TO-268HV (IXGT) surface-mount package facilitates integration into compact designs, operating across a temperature range of -55°C to 150°C. This IGBT is suitable for power conversion systems in industrial motor drives, renewable energy inverters, and high-voltage power supplies.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 40 ns |
| Vce(on) (Max) @ Vge, Ic | 7V @ 15V, 3A |
| Supplier Device Package | TO-268HV (IXGT) |
| IGBT Type | - |
| Td (on/off) @ 25°C | 46ns/220ns |
| Switching Energy | 590µJ (on), 180µJ (off) |
| Test Condition | 850V, 6A, 33Ohm, 15V |
| Gate Charge | 18.5 nC |
| Current - Collector (Ic) (Max) | 6 A |
| Voltage - Collector Emitter Breakdown (Max) | 1700 V |
| Current - Collector Pulsed (Icm) | 14 A |
| Power - Max | 75 W |
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