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IXGT6N170A-TRL

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IXGT6N170A-TRL

IGBT 1700V 6A TO268

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

The IXYS IXGT6N170A-TRL is a high-voltage Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. This component offers a maximum collector-emitter voltage of 1700 V and a continuous collector current of 6 A, with a pulsed capability of 14 A. The TO-268 package facilitates surface mounting, suitable for high-density power solutions. Key electrical characteristics include a gate charge of 18.5 nC and a maximum on-state voltage (Vce(on)) of 7 V at 15 V gate-source voltage and 3 A collector current. Switching performance is characterized by typical turn-on delay (Td(on)) of 46 ns and turn-off delay (Td(off)) of 220 ns at 25°C, with a reverse recovery time (trr) of 40 ns. With a maximum power dissipation of 75 W and an operating temperature range of -55°C to 150°C, this device is well-suited for use in industrial power supplies, motor control, and renewable energy systems. The part is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 25 week(s)Product Status: ActivePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)40 ns
Vce(on) (Max) @ Vge, Ic7V @ 15V, 3A
Supplier Device PackageTO-268
IGBT Type-
Td (on/off) @ 25°C46ns/220ns
Switching Energy590µJ (on), 180µJ (off)
Test Condition850V, 6A, 33Ohm, 15V
Gate Charge18.5 nC
Current - Collector (Ic) (Max)6 A
Voltage - Collector Emitter Breakdown (Max)1700 V
Current - Collector Pulsed (Icm)14 A
Power - Max75 W

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