IXGT6N170-TRL
IGBT 1700V 12A TO268Manufacturer: IXYS
Categories: Single IGBTs
Quality Control: Learn More
IXYS IXGT6N170-TRL is a high-voltage Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. This component features a 1700V collector-emitter breakdown voltage and a continuous collector current of 12A, with a pulsed capability of 24A. The Vce(on) is specified at 4V with a gate drive of 15V and collector current of 6A, under test conditions of 1360V, 6A, 33 Ohm, and 15V. With a maximum power dissipation of 75W, it is suitable for surface mount installations within a TO-268-3, D3PAK package. The typical gate charge is 20 nC, and reverse recovery time is 36 ns. Operating temperature ranges from -55°C to 150°C. This device is commonly utilized in industrial motor drives and power factor correction circuits. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 36 ns |
| Vce(on) (Max) @ Vge, Ic | 4V @ 15V, 6A |
| Supplier Device Package | TO-268 |
| IGBT Type | - |
| Td (on/off) @ 25°C | 40ns/250ns |
| Switching Energy | - |
| Test Condition | 1360V, 6A, 33Ohm, 15V |
| Gate Charge | 20 nC |
| Current - Collector (Ic) (Max) | 12 A |
| Voltage - Collector Emitter Breakdown (Max) | 1700 V |
| Current - Collector Pulsed (Icm) | 24 A |
| Power - Max | 75 W |