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IXGT60N60C2

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IXGT60N60C2

IGBT PT 600V 75A TO268AA

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

The IXYS IXGT60N60C2 is a HiPerFAST™ IGBT featuring a 600V collector-emitter breakdown voltage and a continuous collector current of 75A. This Power Transistor IGBT offers a pulsed collector current capability of 300A and a maximum power dissipation of 480W. The device exhibits a low on-state voltage of 2.5V at 15V gate-emitter voltage and 50A collector current. Switching characteristics include a turn-on delay of 18ns and a turn-off delay of 95ns at 25°C, with a gate charge of 146 nC. The IXGT60N60C2 is housed in a TO-268AA surface mount package, suitable for applications in power switching, motor control, and industrial power supplies. Operating temperature range is -55°C to 150°C.

Additional Information

Series: HiPerFAST™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 50A
Supplier Device PackageTO-268AA
IGBT TypePT
Td (on/off) @ 25°C18ns/95ns
Switching Energy480µJ (off)
Test Condition400V, 50A, 2Ohm, 15V
Gate Charge146 nC
Current - Collector (Ic) (Max)75 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)300 A
Power - Max480 W

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