IXGT60N60B2
IGBT PT 600V 75A TO268AAManufacturer: IXYS
Categories: Single IGBTs
Quality Control: Learn More
The IXYS HiPerFAST™ IGBT, part number IXGT60N60B2, is a high-performance insulated gate bipolar transistor designed for demanding applications. This PT IGBT features a 600V collector-emitter breakdown voltage and a continuous collector current rating of 75A, with a pulsed capability of 300A. With a maximum power dissipation of 500W and a low on-state voltage of 1.8V at 15V gate-source voltage and 50A collector current, it offers efficient power handling. The device exhibits a typical gate charge of 170 nC and switching times of 28ns turn-on and 160ns turn-off at 25°C. Its TO-268AA surface mount package is suitable for high-density board layouts. This component is frequently utilized in power switching applications across industrial, motor drive, and power supply sectors.
Additional Information
Series: HiPerFAST™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 50A |
| Supplier Device Package | TO-268AA |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 28ns/160ns |
| Switching Energy | 1mJ (off) |
| Test Condition | 400V, 50A, 3.3Ohm, 15V |
| Gate Charge | 170 nC |
| Current - Collector (Ic) (Max) | 75 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 300 A |
| Power - Max | 500 W |
Request a Quote
Clients Also Buy
IXGH50N90B2D1
IGBT PT 900V 75A TO247AD
IXGH50N90B2
IGBT 900V 75A 400W TO247
IXGH24N60A
IGBT 600V 48A 150W TO247AD
