IXGT60N60
IGBT PT 600V 75A TO268AAManufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXGT60N60 is a high-performance Power Transistor (PT) Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. This device features a 600V collector-emitter breakdown voltage and a continuous collector current capability of 75A, with a pulsed current rating of 200A. The IGBT type is PT, offering a standard input configuration. It delivers a maximum power dissipation of 300W and an on-state voltage (Vce(on)) of 1.7V at 15V gate-emitter voltage and 60A collector current. Switching characteristics include a turn-on delay of 50ns and turn-off delay of 300ns at 25°C, with an off-state switching energy of 8mJ. The device is packaged in a TO-268AA (TO-268-3, D3PAK) surface mount configuration, suitable for operation across a wide temperature range of -55°C to 150°C. This component is utilized in industrial applications requiring efficient power switching.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.7V @ 15V, 60A |
| Supplier Device Package | TO-268AA |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 50ns/300ns |
| Switching Energy | 8mJ (off) |
| Test Condition | 480V, 60A, 2.7Ohm, 15V |
| Gate Charge | 130 nC |
| Current - Collector (Ic) (Max) | 75 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 200 A |
| Power - Max | 300 W |
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