IXGT50N60B2
IGBT PT 600V 75A TO268AAManufacturer: IXYS
Categories: Single IGBTs
Quality Control: Learn More
The IXYS IXGT50N60B2 is a HiPerFAST™ series insulated gate bipolar transistor (IGBT) designed for high-power switching applications. This PT-type IGBT features a 600V collector-emitter breakdown voltage and a continuous collector current rating of 75A, with a pulsed current capability of up to 200A. The device exhibits a low on-state voltage of 2V at 15V gate-emitter voltage and 40A collector current, and a maximum power dissipation of 400W. Switching characteristics include a turn-off switching energy of 550µJ under test conditions of 480V, 40A, 5 Ohm, and 15V, with typical on and off delays of 18ns and 190ns respectively. The gate charge is specified at 140 nC. Packaged in a TO-268AA (D3PAK) surface-mount configuration, this component is suitable for demanding applications within the industrial, automotive, and power supply sectors. Operating temperature ranges from -55°C to 150°C.
Additional Information
Series: HiPerFAST™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 40A |
| Supplier Device Package | TO-268AA |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 18ns/190ns |
| Switching Energy | 550µJ (off) |
| Test Condition | 480V, 40A, 5Ohm, 15V |
| Gate Charge | 140 nC |
| Current - Collector (Ic) (Max) | 75 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 200 A |
| Power - Max | 400 W |
Request a Quote
Clients Also Buy
IXGH50N90B2D1
IGBT PT 900V 75A TO247AD
IXGH50N90B2
IGBT 900V 75A 400W TO247
IXGH24N60A
IGBT 600V 48A 150W TO247AD
