IXGT40N60C2
IGBT PT 600V 75A TO268AAManufacturer: IXYS
Categories: Single IGBTs
Quality Control: Learn More
The IXYS IXGT40N60C2 is a HiPerFAST™ series Insulated Gate Bipolar Transistor (IGBT) featuring a 600V collector-emitter breakdown voltage and a continuous collector current rating of 75A. This PT type IGBT offers a pulsed collector current capability of 200A and a maximum power dissipation of 300W. With a typical gate charge of 95 nC and switching times of 18ns turn-on and 90ns turn-off under specified test conditions (400V, 30A, 3 Ohm, 15V), it is designed for efficient high-frequency switching applications. The on-state voltage (Vce(on)) is a maximum of 2.7V at 15V gate-emitter voltage and 30A collector current. Packaged in a surface-mount TO-268AA (TO-268-3, D3PAK) configuration, this device operates across a wide temperature range of -55°C to 150°C. The IXGT40N60C2 is suitable for use in power conversion systems, motor control, and induction heating applications.
Additional Information
Series: HiPerFAST™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 30A |
| Supplier Device Package | TO-268AA |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 18ns/90ns |
| Switching Energy | 200µJ (off) |
| Test Condition | 400V, 30A, 3Ohm, 15V |
| Gate Charge | 95 nC |
| Current - Collector (Ic) (Max) | 75 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 200 A |
| Power - Max | 300 W |
Request a Quote
Clients Also Buy
IXGH50N90B2D1
IGBT PT 900V 75A TO247AD
IXGH50N90B2
IGBT 900V 75A 400W TO247
IXGH24N60A
IGBT 600V 48A 150W TO247AD
