IXGT39N60BD1
IGBT 600V 76A TO268AAManufacturer: IXYS
Categories: Single IGBTs
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The IXYS HiPerFAST™ IGBT, part number IXGT39N60BD1, is a robust power semiconductor designed for demanding applications. This N-channel IGBT features a 600V collector-emitter breakdown voltage and a continuous collector current capability of 76A at a case temperature of 25°C, with a pulsed capability of 152A. The component offers a low on-state voltage (Vce(on)) of 1.7V at 15V gate-emitter voltage and 39A collector current. With a maximum power dissipation of 200W and a typical switching energy of 4mJ (off), it is suitable for power factor correction, motor drives, and industrial power supplies. The device is housed in a TO-268AA package for surface mounting, operating across a temperature range of -55°C to 150°C. Key parameters include a gate charge of 110nC and a reverse recovery time (trr) of 25ns.
Additional Information
Series: HiPerFAST™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 25 ns |
| Vce(on) (Max) @ Vge, Ic | 1.7V @ 15V, 39A |
| Supplier Device Package | TO-268AA |
| IGBT Type | - |
| Td (on/off) @ 25°C | 25ns/250ns |
| Switching Energy | 4mJ (off) |
| Test Condition | 480V, 39A, 4.7Ohm, 15V |
| Gate Charge | 110 nC |
| Current - Collector (Ic) (Max) | 76 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 152 A |
| Power - Max | 200 W |
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