IXGT32N60BD1
IGBT 600V 60A TO268AAManufacturer: IXYS
Categories: Single IGBTs
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The IXYS HiPerFAST™ IXGT32N60BD1 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power switching applications. This device offers a 600V collector-emitter breakdown voltage and a continuous collector current of 60A, with a pulsed capability of 120A. Featuring a low Vce(on) of 2.3V at 15V gate-emitter voltage and 32A collector current, it minimizes conduction losses. The TO-268AA surface mount package facilitates efficient thermal management for power dissipation up to 200W. Key parameters include a gate charge of 110 nC and a reverse recovery time of 25 ns, contributing to efficient switching performance with typical on/off delay times of 25ns/100ns at 25°C. This component is suitable for use in motor drives, power supplies, and industrial automation.
Additional Information
Series: HiPerFAST™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 25 ns |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 32A |
| Supplier Device Package | TO-268AA |
| IGBT Type | - |
| Td (on/off) @ 25°C | 25ns/100ns |
| Switching Energy | 600µJ (off) |
| Test Condition | 480V, 32A, 4.7Ohm, 15V |
| Gate Charge | 110 nC |
| Current - Collector (Ic) (Max) | 60 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 200 W |
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