IXGT32N170A
IGBT NPT 1700V 32A TO268AAManufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXGT32N170A is a high-voltage NPT IGBT designed for demanding applications. With a collector-emitter breakdown voltage of 1700 V and a continuous collector current of 32 A (110 A pulsed), this device offers robust performance. It features a low on-state voltage of 5 V at 15 V gate-emitter voltage and 21 A collector current, with a maximum power dissipation of 350 W. The TO-268AA package facilitates efficient surface mounting. Key switching characteristics include a gate charge of 155 nC and switching energy of 1.5 mJ (off) under test conditions of 850 V, 32 A, 2.7 Ohms, and 15 V. This component is suitable for use in power conversion systems across industries such as industrial automation, renewable energy, and electric vehicle powertrains. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 5V @ 15V, 21A |
| Supplier Device Package | TO-268AA |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 46ns/260ns |
| Switching Energy | 1.5mJ (off) |
| Test Condition | 850V, 32A, 2.7Ohm, 15V |
| Gate Charge | 155 nC |
| Current - Collector (Ic) (Max) | 32 A |
| Voltage - Collector Emitter Breakdown (Max) | 1700 V |
| Current - Collector Pulsed (Icm) | 110 A |
| Power - Max | 350 W |
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