IXGT32N170
IGBT NPT 1700V 75A TO268AAManufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXGT32N170 is a high-voltage NPT IGBT designed for demanding applications. This component features a 1700 V collector-emitter breakdown voltage and a continuous collector current rating of 75 A, with a pulsed capability of 200 A. The IGBT type is Non-Punch Through (NPT), offering robust performance. It is presented in a TO-268AA surface mount package, also known as TO-268-3 or D3PAK. The device has a maximum power dissipation of 350 W and exhibits typical switching times of 45 ns turn-on and 270 ns turn-off at 25°C under test conditions of 1020 V and 32 A. The on-state voltage (Vce(on)) is a maximum of 3.3 V at 15 V gate voltage and 32 A collector current. Gate charge is specified at 155 nC. Operating temperature ranges from -55°C to 150°C (TJ). This component is suitable for use in power conversion systems within industrial and renewable energy sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 3.3V @ 15V, 32A |
| Supplier Device Package | TO-268AA |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 45ns/270ns |
| Switching Energy | 11mJ (off) |
| Test Condition | 1020V, 32A, 2.7Ohm, 15V |
| Gate Charge | 155 nC |
| Current - Collector (Ic) (Max) | 75 A |
| Voltage - Collector Emitter Breakdown (Max) | 1700 V |
| Current - Collector Pulsed (Icm) | 200 A |
| Power - Max | 350 W |
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