IXGT32N120A3
IGBT PT 1200V 75A TO268AAManufacturer: IXYS
Categories: Single IGBTs
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The IXYS GenX3™ IXGT32N120A3 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. This PT IGBT features a 1200V collector-emitter breakdown voltage and a continuous collector current rating of 75A, with a pulsed capability of 230A. The device offers a maximum power dissipation of 300W and a low on-state voltage of 2.35V at 15V gate-emitter voltage and 32A collector current, complemented by a gate charge of 89 nC. Engineered for efficient power conversion, the IXGT32N120A3 is housed in a surface-mount TO-268AA package, facilitating robust thermal management. Its operating temperature range spans from -55°C to 150°C (TJ). This component finds extensive use in power supplies, motor control, and industrial automation systems.
Additional Information
Series: GenX3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 57 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.35V @ 15V, 32A |
| Supplier Device Package | TO-268AA |
| IGBT Type | PT |
| Td (on/off) @ 25°C | - |
| Switching Energy | - |
| Test Condition | - |
| Gate Charge | 89 nC |
| Current - Collector (Ic) (Max) | 75 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 230 A |
| Power - Max | 300 W |
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