IXGT30N60C2
IGBT PT 600V 70A TO268AAManufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXGT30N60C2 is a HiPerFAST™ series Insulated Gate Bipolar Transistor (IGBT) featuring a 600V collector-emitter breakdown voltage and a continuous collector current of 70A. This PT type IGBT offers a maximum power dissipation of 190W and a pulsed collector current capability of 150A. Key parameters include a gate charge of 70 nC and a typical on-state voltage drop of 2.7V at 15V gate-emitter voltage and 24A collector current. Switching characteristics are defined by a turn-on delay of 13ns and a turn-off delay of 70ns at 25°C, with switching energy at 290µJ (off) under test conditions of 400V, 24A, 5 Ohm, and 15V. Designed for surface mounting, it is housed in a TO-268AA package. This component is utilized in applications such as power supplies, motor control, and welding equipment.
Additional Information
Series: HiPerFAST™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 24A |
| Supplier Device Package | TO-268AA |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 13ns/70ns |
| Switching Energy | 290µJ (off) |
| Test Condition | 400V, 24A, 5Ohm, 15V |
| Gate Charge | 70 nC |
| Current - Collector (Ic) (Max) | 70 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 150 A |
| Power - Max | 190 W |
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