IXGT30N120B3D1
IGBT PT 1200V TO268AAManufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXGT30N120B3D1 is a GenX3™ Series N-channel Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage applications. This PT IGBT features a collector-emitter breakdown voltage of 1200V and a continuous collector current capability of 30A (at 15V Vge) with a pulsed current capability (Icm) of 150A. The Vce(on) is specified at 3.5V maximum under the test condition of 15V Vge and 30A Ic. With a maximum power dissipation of 300W, this device offers low switching energy with typical values of 3.47mJ (on) and 2.16mJ (off) as tested at 960V and 30A. The gate charge is 87 nC, and typical turn-on and turn-off delays are 16ns and 127ns respectively at 25°C. The IXGT30N120B3D1 utilizes the TO-268AA package, a surface mount configuration suitable for demanding industrial power conversion, motor control, and power supply designs. It operates within an ambient temperature range of -55°C to 150°C.
Additional Information
Series: GenX3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 57 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 100 ns |
| Vce(on) (Max) @ Vge, Ic | 3.5V @ 15V, 30A |
| Supplier Device Package | TO-268AA |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 16ns/127ns |
| Switching Energy | 3.47mJ (on), 2.16mJ (off) |
| Test Condition | 960V, 30A, 5Ohm, 15V |
| Gate Charge | 87 nC |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 150 A |
| Power - Max | 300 W |
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