IXGT28N60BD1
IGBT 600V 40A TO268AAManufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXGT28N60BD1 is a 600V, 40A insulated gate bipolar transistor (IGBT) housed in a TO-268AA package. This device offers a continuous collector current of 40A and a pulsed collector current of 80A. With a maximum power dissipation of 150W, it features a low collector-emitter saturation voltage of 2V at 15V gate-emitter voltage and 28A collector current. The gate charge is rated at 68 nC, and typical turn-on and turn-off delays at 25°C are 15ns and 175ns respectively. Reverse recovery time is 25 ns. This component is suitable for surface mount applications and operates within an industrial temperature range of -55°C to 150°C. It finds application in power factor correction circuits and motor drives.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 25 ns |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 28A |
| Supplier Device Package | TO-268AA |
| IGBT Type | - |
| Td (on/off) @ 25°C | 15ns/175ns |
| Switching Energy | 2mJ (off) |
| Test Condition | 480V, 28A, 10Ohm, 15V |
| Gate Charge | 68 nC |
| Current - Collector (Ic) (Max) | 40 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 80 A |
| Power - Max | 150 W |
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