IXGT25N250HV
IGBT 2500V 60A TO268HVManufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXGT25N250HV is a high-voltage Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This component features a 2500V collector-emitter breakdown voltage and a continuous collector current rating of 60A, with a pulsed capability of 200A. The IXGT25N250HV is housed in a TO-268HV (IXGT) surface-mount package, offering a robust thermal solution for power dissipation up to 250W. Key electrical characteristics include a 2.9V maximum Vce(on) at 15V gate-source voltage and 25A collector current, and a gate charge of 75 nC. It operates reliably across a wide temperature range from -55°C to 150°C. This device is suitable for use in industrial power supplies, motor drives, and high-voltage switching applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.9V @ 15V, 25A |
| Supplier Device Package | TO-268HV (IXGT) |
| IGBT Type | - |
| Td (on/off) @ 25°C | - |
| Switching Energy | - |
| Test Condition | - |
| Gate Charge | 75 nC |
| Current - Collector (Ic) (Max) | 60 A |
| Voltage - Collector Emitter Breakdown (Max) | 2500 V |
| Current - Collector Pulsed (Icm) | 200 A |
| Power - Max | 250 W |
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