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IXGT20N60BD1

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IXGT20N60BD1

IGBT 600V 40A TO268AA

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

The IXYS IXGT20N60BD1 is a HiPerFAST™ IGBT designed for high-efficiency switching applications. This device features a 600V collector-emitter breakdown voltage and a continuous collector current rating of 40A, with a pulsed capability of 80A. The IGBT type is standard, with a Vce(on) of 2V at 15V gate-emitter voltage and 20A collector current. Key switching parameters include a gate charge of 55 nC, a reverse recovery time of 25 ns, and switching energy of 700µJ (off) under test conditions of 480V, 20A, 10 Ohm, 15V. The on-time and off-time are rated at 15ns and 110ns respectively at 25°C. With a maximum power dissipation of 150W, the IXGT20N60BD1 is housed in a TO-268AA (TO-268-3, D3PAK) surface mount package, suitable for operation in temperature ranges from -55°C to 150°C. This component is utilized in industries such as industrial power supplies and motor control.

Additional Information

Series: HiPerFAST™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)25 ns
Vce(on) (Max) @ Vge, Ic2V @ 15V, 20A
Supplier Device PackageTO-268AA
IGBT Type-
Td (on/off) @ 25°C15ns/110ns
Switching Energy700µJ (off)
Test Condition480V, 20A, 10Ohm, 15V
Gate Charge55 nC
Current - Collector (Ic) (Max)40 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)80 A
Power - Max150 W

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