IXGT20N120B
IGBT PT 1200V 40A TO268AAManufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXGT20N120B is a Power Transistor (PT) IGBT with a collector-emitter breakdown voltage of 1200V. This device offers a continuous collector current of 40A and a pulsed collector current of 80A. The Vce(on) is specified at 3.4V maximum at 15V gate-emitter voltage and 20A collector current, with a gate charge of 72nC. Designed for surface mounting, it is housed in a TO-268AA package. The maximum power dissipation is 190W, and it operates within an ambient temperature range of -55°C to 150°C. Switching characteristics include a turn-on delay of 25ns and turn-off delay of 150ns at 25°C, with a switching energy of 2.1mJ (off), tested under conditions of 960V, 20A, 10O, and 15V. This component is utilized in industrial applications such as power supplies and motor drives.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 25 week(s)Product Status: ActivePackaging: BoxDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Box |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 3.4V @ 15V, 20A |
| Supplier Device Package | TO-268AA |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 25ns/150ns |
| Switching Energy | 2.1mJ (off) |
| Test Condition | 960V, 20A, 10Ohm, 15V |
| Gate Charge | 72 nC |
| Current - Collector (Ic) (Max) | 40 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 80 A |
| Power - Max | 190 W |
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