IXGT16N170
IGBT NPT 1700V 32A TO268AAManufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXGT16N170 is an NPT (Non-Punch-Through) Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage applications. This component features a 1700 V collector-emitter breakdown voltage and a continuous collector current rating of 32 A, with a pulsed capability of 80 A. The IXGT16N170 offers a maximum power dissipation of 190 W and a very low on-state voltage (Vce(on)) of 3.5 V at 16 A, 15 V gate drive. Switching characteristics include an energy loss of 9.3 mJ (off) under test conditions of 1360 V, 16 A, 10 Ohm, and 15 V gate drive, with typical turn-on and turn-off times of 45 ns and 400 ns respectively at 25°C. The gate charge is specified at 78 nC. This IGBT is housed in a TO-268AA (TO-268-3, D3PAK) surface mount package, suitable for operating temperatures from -55°C to 150°C. It finds application in industries such as industrial power supplies, motor control, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 3.5V @ 15V, 16A |
| Supplier Device Package | TO-268AA |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 45ns/400ns |
| Switching Energy | 9.3mJ (off) |
| Test Condition | 1360V, 16A, 10Ohm, 15V |
| Gate Charge | 78 nC |
| Current - Collector (Ic) (Max) | 32 A |
| Voltage - Collector Emitter Breakdown (Max) | 1700 V |
| Current - Collector Pulsed (Icm) | 80 A |
| Power - Max | 190 W |
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