IXGT15N120C
IGBT 1200V 30A TO268AAManufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXGT15N120C is a high-performance Insulated Gate Bipolar Transistor (IGBT) from the Lightspeed™ series, designed for demanding applications. This component features a 1200 V collector-emitter breakdown voltage and a continuous collector current rating of 30 A, with a pulsed capability of up to 60 A. It offers a low on-state voltage of 3.8 V at 15 V gate-emitter voltage and 15 A collector current, with switching energy of 1.05 mJ (off) under specified test conditions (960 V, 15 A, 10 Ohm, 15 V). The device has a gate charge of 69 nC and exhibits typical on/off switching times of 25 ns and 150 ns, respectively. Packaged in a TO-268AA (TO-268-3, D3PAK) for surface mounting, it can operate across an extended temperature range of -55°C to 150°C. This IGBT is suitable for use in power factor correction, motor drives, and industrial power supplies.
Additional Information
Series: Lightspeed™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 3.8V @ 15V, 15A |
| Supplier Device Package | TO-268AA |
| IGBT Type | - |
| Td (on/off) @ 25°C | 25ns/150ns |
| Switching Energy | 1.05mJ (off) |
| Test Condition | 960V, 15A, 10Ohm, 15V |
| Gate Charge | 69 nC |
| Current - Collector (Ic) (Max) | 30 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 60 A |
| Power - Max | 150 W |
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