IXGT10N170
IGBT NPT 1700V 20A TO268AAManufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXGT10N170 is an NPT IGBT designed for high-voltage applications. This device features a 1700 V collector-emitter breakdown voltage and a continuous collector current of 20 A, with a pulsed capability of 70 A. The on-state voltage (Vce(on)) is specified at 4 V under a gate-emitter voltage of 15 V and collector current of 10 A. With a gate charge of 32 nC, this IGBT is suitable for demanding switching applications. Its maximum power dissipation is 110 W. The IXGT10N170 is packaged in a TO-268AA surface-mount case, operating across a temperature range of -55°C to 150°C. This component is utilized in industrial power conversion, renewable energy systems, and electric vehicle power trains.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 4V @ 15V, 10A |
| Supplier Device Package | TO-268AA |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | - |
| Switching Energy | - |
| Test Condition | - |
| Gate Charge | 32 nC |
| Current - Collector (Ic) (Max) | 20 A |
| Voltage - Collector Emitter Breakdown (Max) | 1700 V |
| Current - Collector Pulsed (Icm) | 70 A |
| Power - Max | 110 W |
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