IXGR72N60C3
DISC IGBT PT-HIFREQUENCY ISOPLUSManufacturer: IXYS
Categories: Single IGBTs
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IXYS GenX3™ IXGR72N60C3 is a 600V, 80A Insulated Gate Bipolar Transistor (IGBT) with a 200W maximum power dissipation. This PT-type IGBT features a 2.7V (max) saturation voltage at 15V gate-emitter voltage and 50A collector current, with a 175 nC gate charge. The TO-247-3 package is supplied in the ISOPLUS247™ configuration for through-hole mounting. Key switching characteristics include a 37 ns reverse recovery time and switching energy of 1.03mJ (on) and 480µJ (off) under test conditions of 480V, 50A, 2 Ohm, 15V. Operating temperature range is -55°C to 150°C. This component is suitable for applications in power conversion and motor control requiring high-frequency switching.
Additional Information
Series: GenX3™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 37 ns |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 50A |
| Supplier Device Package | ISOPLUS247™ |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 27ns/77ns |
| Switching Energy | 1.03mJ (on), 480µJ (off) |
| Test Condition | 480V, 50A, 2Ohm, 15V |
| Gate Charge | 175 nC |
| Current - Collector (Ic) (Max) | 80 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 400 A |
| Power - Max | 200 W |
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