IXGR72N60B3H1
IGBT 600V 75A 200W ISOPLUS247Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXGR72N60B3H1 is a 600V, 75A GenX3™ series insulated gate bipolar transistor (IGBT) designed for high-power applications. This PT IGBT features a maximum collector power dissipation of 200W and a low collector-emitter saturation voltage (Vce(on)) of 1.8V at 15V gate-emitter voltage and 60A collector current. It boasts a pulsed collector current capability of 450A and a typical gate charge of 225 nC, facilitating efficient switching. Switching energy is rated at 1.4mJ (on) and 1mJ (off) under test conditions of 480V, 50A, 3 Ohm, and 15V. The device is housed in an ISOPLUS247™ package, a TO-247-3 through-hole mount, and operates across a temperature range of -55°C to 150°C (TJ). This component is commonly utilized in industrial motor drives, uninterruptible power supplies (UPS), and welding equipment.
Additional Information
Series: GenX3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 40 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 140 ns |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 60A |
| Supplier Device Package | ISOPLUS247™ |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 31ns/152ns |
| Switching Energy | 1.4mJ (on), 1mJ (off) |
| Test Condition | 480V, 50A, 3Ohm, 15V |
| Gate Charge | 225 nC |
| Current - Collector (Ic) (Max) | 75 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 450 A |
| Power - Max | 200 W |
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