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IXGR6N170A

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IXGR6N170A

IGBT 1700V 5.5A 50W ISOPLUS247

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

IXYS IXGR6N170A is a high-voltage Insulated Gate Bipolar Transistor (IGBT) designed for demanding power switching applications. This through-hole component features a 1700 V collector-emitter breakdown voltage and a continuous collector current rating of 5.5 A, with a pulsed capability of 18 A. The device offers a power dissipation of 50 W and a low on-state voltage of 7 V at 15 V gate-emitter voltage and 3 A collector current. Switching characteristics include a gate charge of 18.5 nC and switching energies of 590 µJ turn-on and 180 µJ turn-off, measured under a test condition of 850 V, 6 A, 33 Ohm, and 15 V. The IXGR6N170A is housed in the ISOPLUS247™ package, suitable for operation across a wide temperature range of -55°C to 150°C. This IGBT is commonly utilized in power factor correction, uninterruptible power supplies (UPS), and industrial motor drives.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic7V @ 15V, 3A
Supplier Device PackageISOPLUS247™
IGBT Type-
Td (on/off) @ 25°C46ns/220ns
Switching Energy590µJ (on), 180µJ (off)
Test Condition850V, 6A, 33Ohm, 15V
Gate Charge18.5 nC
Current - Collector (Ic) (Max)5.5 A
Voltage - Collector Emitter Breakdown (Max)1700 V
Current - Collector Pulsed (Icm)18 A
Power - Max50 W

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