IXGR60N60C3C1
IGBT 600V 75A 170W ISOPLUS247Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXGR60N60C3C1 is a GenX3™ Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. This device features a 600V collector-emitter breakdown voltage and a continuous collector current rating of 75A, with a pulsed capability of 260A. Key electrical parameters include a low Vce(on) of 2.5V at 15V gate-emitter voltage and 40A collector current, and switching characteristics of 24ns turn-on and 70ns turn-off at the specified test conditions. The gate charge is 115 nC, supporting efficient switching. Built with a PT IGBT structure, it offers robust performance. The IXGR60N60C3C1 is packaged in an ISOPLUS247™ through-hole component, suitable for demanding thermal management. Its high power dissipation of 170W and wide operating temperature range of -55°C to 150°C make it ideal for use in power supplies, motor control, and industrial automation.
Additional Information
Series: GenX3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 40A |
| Supplier Device Package | ISOPLUS247™ |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 24ns/70ns |
| Switching Energy | 830µJ (on), 450µJ (off) |
| Test Condition | 480V, 40A, 3Ohm, 15V |
| Gate Charge | 115 nC |
| Current - Collector (Ic) (Max) | 75 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 260 A |
| Power - Max | 170 W |
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