IXGR60N60B2
IGBT 600V 75A 250W ISOPLUS247Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXGR60N60B2 is a HiPerFAST™ series Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This device features a 600V collector-emitter breakdown voltage and a continuous collector current capability of 75A, with a pulsed current rating of 300A. It offers a low on-state voltage (Vce(on)) of 2V at 15V gate-emitter voltage and 50A collector current. The IGBT exhibits typical turn-on delay (Td(on)) of 28ns and turn-off delay (Td(off)) of 160ns at 25°C. With a maximum power dissipation of 250W and a switching energy of 1mJ (off), it is suitable for applications requiring high efficiency and fast switching. The IXGR60N60B2 is packaged in the ISOPLUS247™ through-hole format, providing robust thermal performance. This component finds utility in sectors such as industrial power supplies, motor control, and renewable energy systems.
Additional Information
Series: HiPerFAST™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 50A |
| Supplier Device Package | ISOPLUS247™ |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 28ns/160ns |
| Switching Energy | 1mJ (off) |
| Test Condition | 400V, 50A, 3.3Ohm, 15V |
| Gate Charge | 170 nC |
| Current - Collector (Ic) (Max) | 75 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 300 A |
| Power - Max | 250 W |
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